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SUD19P06-60L-E3 Datasheet

SUD19P06-60L-E3 Cover
DatasheetSUD19P06-60L-E3
File Size80.59 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUD19P06-60L-E3
Description MOSFET P-CH 60V 19A TO252

SUD19P06-60L-E3 - Vishay Siliconix

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SUD19P06-60L-E3 SUD19P06-60L-E3 Vishay Siliconix MOSFET P-CH 60V 19A TO252 13383

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URL Link

SUD19P06-60L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1710pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 46W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63