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| Datasheet | STY112N65M5 |
| File Size | 851.25 KB |
| Total Pages | 12 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STY112N65M5 |
| Description | MOSFET N-CH 650V 93A MAX247 |
STY112N65M5 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STY112N65M5
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 16870pF @ 100V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3 |