Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STW48N60M2-4 Datasheet

STW48N60M2-4 Cover
DatasheetSTW48N60M2-4
File Size713.41 KB
Total Pages12
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STW48N60M2-4
Description MOSFET N-CH 600V 42A TO247-4

STW48N60M2-4 - STMicroelectronics

STW48N60M2-4 Datasheet Page 1
STW48N60M2-4 Datasheet Page 2
STW48N60M2-4 Datasheet Page 3
STW48N60M2-4 Datasheet Page 4
STW48N60M2-4 Datasheet Page 5
STW48N60M2-4 Datasheet Page 6
STW48N60M2-4 Datasheet Page 7
STW48N60M2-4 Datasheet Page 8
STW48N60M2-4 Datasheet Page 9
STW48N60M2-4 Datasheet Page 10
STW48N60M2-4 Datasheet Page 11
STW48N60M2-4 Datasheet Page 12

The Products You May Be Interested In

STW48N60M2-4 STW48N60M2-4 STMicroelectronics MOSFET N-CH 600V 42A TO247-4 1386

More on Order

URL Link

STW48N60M2-4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3060pF @ 100V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4