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| Datasheet | STU9HN65M2 |
| File Size | 722.14 KB |
| Total Pages | 12 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STU9HN65M2 |
| Description | MOSFET N-CH 650V 5.5A IPAK |
STU9HN65M2 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STU9HN65M2
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Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 820mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |