Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STTH4R06DEE-TR Datasheet

STTH4R06DEE-TR Cover
DatasheetSTTH4R06DEE-TR
File Size93.15 KB
Total Pages8
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STTH4R06DEE-TR
Description DIODE GEN PURP 600V 4A POWERFLAT

STTH4R06DEE-TR - STMicroelectronics

STTH4R06DEE-TR Datasheet Page 1
STTH4R06DEE-TR Datasheet Page 2
STTH4R06DEE-TR Datasheet Page 3
STTH4R06DEE-TR Datasheet Page 4
STTH4R06DEE-TR Datasheet Page 5
STTH4R06DEE-TR Datasheet Page 6
STTH4R06DEE-TR Datasheet Page 7
STTH4R06DEE-TR Datasheet Page 8

The Products You May Be Interested In

STTH4R06DEE-TR STTH4R06DEE-TR STMicroelectronics DIODE GEN PURP 600V 4A POWERFLAT 264

More on Order

URL Link

STTH4R06DEE-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

4A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

3µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PowerFlat™ (3.3x3.3)

Operating Temperature - Junction

150°C (Max)