Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STS25NH3LL-E Datasheet

STS25NH3LL-E Cover
DatasheetSTS25NH3LL-E
File Size313.05 KB
Total Pages11
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STS25NH3LL-E, STS25NH3LL
Description MOSFET N-CH 30V 25A 8-SOIC, MOSFET N-CH 30V 25A 8-SOIC

STS25NH3LL-E - STMicroelectronics

STS25NH3LL-E Datasheet Page 1
STS25NH3LL-E Datasheet Page 2
STS25NH3LL-E Datasheet Page 3
STS25NH3LL-E Datasheet Page 4
STS25NH3LL-E Datasheet Page 5
STS25NH3LL-E Datasheet Page 6
STS25NH3LL-E Datasheet Page 7
STS25NH3LL-E Datasheet Page 8
STS25NH3LL-E Datasheet Page 9
STS25NH3LL-E Datasheet Page 10
STS25NH3LL-E Datasheet Page 11

The Products You May Be Interested In

STS25NH3LL-E STS25NH3LL-E STMicroelectronics MOSFET N-CH 30V 25A 8-SOIC 497

More on Order

STS25NH3LL STS25NH3LL STMicroelectronics MOSFET N-CH 30V 25A 8-SOIC 396

More on Order

URL Link

STS25NH3LL-E

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

4450pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STS25NH3LL

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

4450pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)