Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STS20N3LLH6 Datasheet

STS20N3LLH6 Cover
DatasheetSTS20N3LLH6
File Size543.16 KB
Total Pages13
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STS20N3LLH6
Description MOSFET N-CH 30V 20A 8SOIC

STS20N3LLH6 - STMicroelectronics

STS20N3LLH6 Datasheet Page 1
STS20N3LLH6 Datasheet Page 2
STS20N3LLH6 Datasheet Page 3
STS20N3LLH6 Datasheet Page 4
STS20N3LLH6 Datasheet Page 5
STS20N3LLH6 Datasheet Page 6
STS20N3LLH6 Datasheet Page 7
STS20N3LLH6 Datasheet Page 8
STS20N3LLH6 Datasheet Page 9
STS20N3LLH6 Datasheet Page 10
STS20N3LLH6 Datasheet Page 11
STS20N3LLH6 Datasheet Page 12
STS20N3LLH6 Datasheet Page 13

The Products You May Be Interested In

STS20N3LLH6 STS20N3LLH6 STMicroelectronics MOSFET N-CH 30V 20A 8SOIC 295

More on Order

URL Link

STS20N3LLH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)