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STPSC1006G-TR Datasheet

STPSC1006G-TR Cover
DatasheetSTPSC1006G-TR
File Size107.03 KB
Total Pages8
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STPSC1006G-TR
Description DIODE SILICON 600V 10A D2PAK

STPSC1006G-TR - STMicroelectronics

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URL Link

STPSC1006G-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

150µA @ 600V

Capacitance @ Vr, F

650pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK

Operating Temperature - Junction

-40°C ~ 175°C