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STP80N20M5 Datasheet

STP80N20M5 Cover
DatasheetSTP80N20M5
File Size929.94 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STP80N20M5, STB80N20M5
Description MOSFET N-CH 200V 61A TO-220, MOSFET N-CH 200V 61A D2PAK

STP80N20M5 - STMicroelectronics

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URL Link

STP80N20M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 30.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4329pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STB80N20M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 30.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4329pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB