Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STP30N10F7 Datasheet

STP30N10F7 Cover
DatasheetSTP30N10F7
File Size1,044.37 KB
Total Pages13
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STP30N10F7
Description MOSFET N-CH 100V 32A TO220AB

STP30N10F7 - STMicroelectronics

STP30N10F7 Datasheet Page 1
STP30N10F7 Datasheet Page 2
STP30N10F7 Datasheet Page 3
STP30N10F7 Datasheet Page 4
STP30N10F7 Datasheet Page 5
STP30N10F7 Datasheet Page 6
STP30N10F7 Datasheet Page 7
STP30N10F7 Datasheet Page 8
STP30N10F7 Datasheet Page 9
STP30N10F7 Datasheet Page 10
STP30N10F7 Datasheet Page 11
STP30N10F7 Datasheet Page 12
STP30N10F7 Datasheet Page 13

The Products You May Be Interested In

STP30N10F7 STP30N10F7 STMicroelectronics MOSFET N-CH 100V 32A TO220AB 3171

More on Order

URL Link

STP30N10F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3