Semiconductors
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Optoelectronics
| Datasheet | STP16N60M2 |
| File Size | 439.61 KB |
| Total Pages | 16 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STP16N60M2, STU16N60M2 |
| Description | MOSFET N-CH 600V 12A TO-220AB, MOSFET N-CH 600V 12A IPAK |
STP16N60M2 - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |