Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STP10LN80K5 Datasheet

STP10LN80K5 Cover
DatasheetSTP10LN80K5
File Size735.98 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STP10LN80K5
Description MOSFET N-CH 800V 8A TO-220

STP10LN80K5 - STMicroelectronics

STP10LN80K5 Datasheet Page 1
STP10LN80K5 Datasheet Page 2
STP10LN80K5 Datasheet Page 3
STP10LN80K5 Datasheet Page 4
STP10LN80K5 Datasheet Page 5
STP10LN80K5 Datasheet Page 6
STP10LN80K5 Datasheet Page 7
STP10LN80K5 Datasheet Page 8
STP10LN80K5 Datasheet Page 9
STP10LN80K5 Datasheet Page 10
STP10LN80K5 Datasheet Page 11
STP10LN80K5 Datasheet Page 12
STP10LN80K5 Datasheet Page 13
STP10LN80K5 Datasheet Page 14

The Products You May Be Interested In

STP10LN80K5 STP10LN80K5 STMicroelectronics MOSFET N-CH 800V 8A TO-220 2421

More on Order

URL Link

STP10LN80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

630mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

427pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3