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STH275N8F7-2AG Datasheet

STH275N8F7-2AG Cover
DatasheetSTH275N8F7-2AG
File Size883.38 KB
Total Pages18
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STH275N8F7-2AG, STH275N8F7-6AG
Description MOSFET N-CH 80V 180A H2PAK-2, MOSFET N-CH 80V 180A H2PAK-6

STH275N8F7-2AG - STMicroelectronics

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URL Link

STH275N8F7-2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 50V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2Pak-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STH275N8F7-6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 50V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-6

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)