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STGY80H65DFB Datasheet

STGY80H65DFB Cover
DatasheetSTGY80H65DFB
File Size1,458.74 KB
Total Pages22
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts STGY80H65DFB, STGWA80H65DFB
Description IGBT 650V 120A 469W MAX247, IGBT BIPO 650V 80A TO247-3

STGY80H65DFB - STMicroelectronics

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URL Link

STGY80H65DFB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 80A

Power - Max

469W

Switching Energy

2.1mJ (on), 1.5mJ (off)

Input Type

Standard

Gate Charge

414nC

Td (on/off) @ 25°C

84ns/280ns

Test Condition

400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

MAX247™

STGWA80H65DFB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 80A

Power - Max

469W

Switching Energy

2.1mJ (on), 1.5mJ (off)

Input Type

Standard

Gate Charge

414nC

Td (on/off) @ 25°C

84ns/280ns

Test Condition

400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads