Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

STFW4N150 Datasheet

STFW4N150 Cover
DatasheetSTFW4N150
File Size754.03 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts STFW4N150, STW4N150, STP4N150
Description MOSFET N-CH 1500V 4A TO3PF, MOSFET N-CH 1500V 4A TO-247, MOSFET N-CH 1500V 4A TO-220

STFW4N150 - STMicroelectronics

STFW4N150 Datasheet Page 1
STFW4N150 Datasheet Page 2
STFW4N150 Datasheet Page 3
STFW4N150 Datasheet Page 4
STFW4N150 Datasheet Page 5
STFW4N150 Datasheet Page 6
STFW4N150 Datasheet Page 7
STFW4N150 Datasheet Page 8
STFW4N150 Datasheet Page 9
STFW4N150 Datasheet Page 10
STFW4N150 Datasheet Page 11
STFW4N150 Datasheet Page 12
STFW4N150 Datasheet Page 13
STFW4N150 Datasheet Page 14
STFW4N150 Datasheet Page 15

The Products You May Be Interested In

STFW4N150 STFW4N150 STMicroelectronics MOSFET N-CH 1500V 4A TO3PF 739

More on Order

STW4N150 STW4N150 STMicroelectronics MOSFET N-CH 1500V 4A TO-247 3635

More on Order

STP4N150 STP4N150 STMicroelectronics MOSFET N-CH 1500V 4A TO-220 1386

More on Order

URL Link

STFW4N150

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOWATT-218FX

Package / Case

ISOWATT218FX

STW4N150

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

STP4N150

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3