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| Datasheet | STF30NM50N |
| File Size | 622.28 KB |
| Total Pages | 18 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | STF30NM50N, STB30NM50N, STP30NM50N, STW30NM50N |
| Description | MOSFET N-CH 500V 27A TO-220FP, MOSFET N-CH 500V 27A D2PAK, MOSFET N-CH 500V 27A TO-220, MOSFET N-CH 500V 27A TO-247 |
STF30NM50N - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |