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| Datasheet | STD1HNC60T4 |
| File Size | 276.03 KB |
| Total Pages | 9 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STD1HNC60T4 |
| Description | MOSFET N-CH 600V 2A DPAK |
STD1HNC60T4 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/STD1HNC60T4
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Manufacturer STMicroelectronics Series PowerMESH™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 228pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |