Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

STB45N50DM2AG Datasheet

STB45N50DM2AG Cover
DatasheetSTB45N50DM2AG
File Size894.89 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STB45N50DM2AG
Description MOSFET N-CH 500V 35A

STB45N50DM2AG - STMicroelectronics

STB45N50DM2AG Datasheet Page 1
STB45N50DM2AG Datasheet Page 2
STB45N50DM2AG Datasheet Page 3
STB45N50DM2AG Datasheet Page 4
STB45N50DM2AG Datasheet Page 5
STB45N50DM2AG Datasheet Page 6
STB45N50DM2AG Datasheet Page 7
STB45N50DM2AG Datasheet Page 8
STB45N50DM2AG Datasheet Page 9
STB45N50DM2AG Datasheet Page 10
STB45N50DM2AG Datasheet Page 11
STB45N50DM2AG Datasheet Page 12
STB45N50DM2AG Datasheet Page 13
STB45N50DM2AG Datasheet Page 14
STB45N50DM2AG Datasheet Page 15

The Products You May Be Interested In

STB45N50DM2AG STB45N50DM2AG STMicroelectronics MOSFET N-CH 500V 35A 2264

More on Order

URL Link

STB45N50DM2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

84mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB