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| Datasheet | SQP100N04-3M6_GE3 |
| File Size | 172.41 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQP100N04-3M6_GE3 |
| Description | MOSFET N-CH 40V 100A TO220AB |
SQP100N04-3M6_GE3 - Vishay Siliconix
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SQP100N04-3M6_GE3 | Vishay Siliconix | MOSFET N-CH 40V 100A TO220AB | 869 More on Order |
URL Link
www.oemstron.com/datasheet/SQP100N04-3M6_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |