Datasheet | SQM100N10-10_GE3 |
File Size | 159.68 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SQM100N10-10_GE3 |
Description | MOSFET N-CH 100V 100A TO-263 |
SQM100N10-10_GE3 - Vishay Siliconix
The Products You May Be Interested In
SQM100N10-10_GE3 | Vishay Siliconix | MOSFET N-CH 100V 100A TO-263 | 460 More on Order |
URL Link
www.oemstron.com/datasheet/SQM100N10-10_GE3
Vishay Siliconix Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8050pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |