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SQJ560EP-T1_GE3 Datasheet

SQJ560EP-T1_GE3 Cover
DatasheetSQJ560EP-T1_GE3
File Size303.92 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJ560EP-T1_GE3
Description MOSFET DUAL N P CH 60V PPAK SO-8

SQJ560EP-T1_GE3 - Vishay Siliconix

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URL Link

SQJ560EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc), 18A (Tc)

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V, 45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

Power - Max

34W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual