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SQ4937EY-T1_GE3 Datasheet

SQ4937EY-T1_GE3 Cover
DatasheetSQ4937EY-T1_GE3
File Size181.81 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ4937EY-T1_GE3
Description MOSFET 2 P-CHANNEL 30V 5A 8SOIC

SQ4937EY-T1_GE3 - Vishay Siliconix

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URL Link

SQ4937EY-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Rds On (Max) @ Id, Vgs

75mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

Power - Max

3.3W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC