Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

SQ4050EY-T1_GE3 Datasheet

SQ4050EY-T1_GE3 Cover
DatasheetSQ4050EY-T1_GE3
File Size216.7 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ4050EY-T1_GE3
Description MOSFET N-CHANNEL 40V 19A 8SOIC

SQ4050EY-T1_GE3 - Vishay Siliconix

SQ4050EY-T1_GE3 Datasheet Page 1
SQ4050EY-T1_GE3 Datasheet Page 2
SQ4050EY-T1_GE3 Datasheet Page 3
SQ4050EY-T1_GE3 Datasheet Page 4
SQ4050EY-T1_GE3 Datasheet Page 5
SQ4050EY-T1_GE3 Datasheet Page 6
SQ4050EY-T1_GE3 Datasheet Page 7
SQ4050EY-T1_GE3 Datasheet Page 8

The Products You May Be Interested In

SQ4050EY-T1_GE3 SQ4050EY-T1_GE3 Vishay Siliconix MOSFET N-CHANNEL 40V 19A 8SOIC 139

More on Order

URL Link

SQ4050EY-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2406pF @ 20V

FET Feature

-

Power Dissipation (Max)

6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)