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SPD50N03S207GBTMA1 Datasheet

SPD50N03S207GBTMA1 Cover
DatasheetSPD50N03S207GBTMA1
File Size1,181.35 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SPD50N03S207GBTMA1
Description MOSFET N-CH 30V 50A TO252-3

SPD50N03S207GBTMA1 - Infineon Technologies

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URL Link

SPD50N03S207GBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

46.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63