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SPD30N03S2L07GBTMA1 Datasheet

SPD30N03S2L07GBTMA1 Cover
DatasheetSPD30N03S2L07GBTMA1
File Size651.83 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SPD30N03S2L07GBTMA1
Description MOSFET N-CH 30V 30A TO252-3

SPD30N03S2L07GBTMA1 - Infineon Technologies

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URL Link

SPD30N03S2L07GBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63