Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SPD08N50C3BTMA1 |
| File Size | 256.76 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SPD08N50C3BTMA1 |
| Description | MOSFET N-CH 560V 7.6A DPAK |
SPD08N50C3BTMA1 - Infineon Technologies
The Products You May Be Interested In
 |
SPD08N50C3BTMA1 | Infineon Technologies | MOSFET N-CH 560V 7.6A DPAK | 452 More on Order |
URL Link
www.oemstron.com/datasheet/SPD08N50C3BTMA1
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 560V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |