Semiconductors
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Optoelectronics
| Datasheet | SPB80P06P |
| File Size | 96.2 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SPB80P06P, SPP80P06PBKSA1 |
| Description | MOSFET P-CH 60V 80A D2PAK, MOSFET P-CH 60V 80A TO-220AB |
SPB80P06P - Infineon Technologies
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V Vgs(th) (Max) @ Id 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V FET Feature - Power Dissipation (Max) 340W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V Vgs(th) (Max) @ Id 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V FET Feature - Power Dissipation (Max) 340W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |