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SIZF920DT-T1-GE3 Datasheet

SIZF920DT-T1-GE3 Cover
DatasheetSIZF920DT-T1-GE3
File Size270.65 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZF920DT-T1-GE3
Description MOSFET DL N-CH 30V POWERPAIR 6X5

SIZF920DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZF920DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual), Schottky

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)

Rds On (Max) @ Id, Vgs

3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA, 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V, 125nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 15V, 5230pF @ 15V

Power - Max

3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (6x5)