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SIZ926DT-T1-GE3 Datasheet

SIZ926DT-T1-GE3 Cover
DatasheetSIZ926DT-T1-GE3
File Size247.02 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ926DT-T1-GE3
Description MOSFET 2 N-CH 25V 8-POWERPAIR

SIZ926DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZ926DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

40A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs

4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V, 41nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

925pF @ 10V, 2150pF @ 10V

Power - Max

20.2W, 40W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair® (6x5)