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SIZ700DT-T1-GE3 Datasheet

SIZ700DT-T1-GE3 Cover
DatasheetSIZ700DT-T1-GE3
File Size207.74 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ700DT-T1-GE3
Description MOSFET 2N-CH 20V 16A PPAK 1212-8

SIZ700DT-T1-GE3 - Vishay Siliconix

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SIZ700DT-T1-GE3 SIZ700DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 16A PPAK 1212-8 280

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URL Link

SIZ700DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

16A

Rds On (Max) @ Id, Vgs

8.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

Power - Max

2.36W, 2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-PowerPair™

Supplier Device Package

6-PowerPair™