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SISH116DN-T1-GE3 Datasheet

SISH116DN-T1-GE3 Cover
DatasheetSISH116DN-T1-GE3
File Size182.98 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SISH116DN-T1-GE3
Description MOSFET N-CH 40V PPAK 1212-8SH

SISH116DN-T1-GE3 - Vishay Siliconix

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SISH116DN-T1-GE3 SISH116DN-T1-GE3 Vishay Siliconix MOSFET N-CH 40V PPAK 1212-8SH 3680

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URL Link

SISH116DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8SH

Package / Case

PowerPAK® 1212-8SH