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| Datasheet | SIS903DN-T1-GE3 |
| File Size | 243.48 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIS903DN-T1-GE3 |
| Description | MOSFET DUAL P-CHAN POWERPAK 1212 |
SIS903DN-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIS903DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V Power - Max 2.6W (Ta), 23W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |