Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIS888DN-T1-GE3 Datasheet

SIS888DN-T1-GE3 Cover
DatasheetSIS888DN-T1-GE3
File Size204.33 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIS888DN-T1-GE3
Description MOSFET N-CH 150V 20.2A 1212-8S

SIS888DN-T1-GE3 - Vishay Siliconix

SIS888DN-T1-GE3 Datasheet Page 1
SIS888DN-T1-GE3 Datasheet Page 2
SIS888DN-T1-GE3 Datasheet Page 3
SIS888DN-T1-GE3 Datasheet Page 4
SIS888DN-T1-GE3 Datasheet Page 5
SIS888DN-T1-GE3 Datasheet Page 6
SIS888DN-T1-GE3 Datasheet Page 7
SIS888DN-T1-GE3 Datasheet Page 8
SIS888DN-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SIS888DN-T1-GE3 SIS888DN-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 20.2A 1212-8S 3851

More on Order

URL Link

SIS888DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

58mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 75V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TA)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S