Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIRA20DP-T1-RE3 |
| File Size | 408.93 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIRA20DP-T1-RE3 |
| Description | MOSFET N-CHAN 25V POWERPAK SO-8 |
SIRA20DP-T1-RE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIRA20DP-T1-RE3 | Vishay Siliconix | MOSFET N-CHAN 25V POWERPAK SO-8 | 4026 More on Order |
URL Link
www.oemstron.com/datasheet/SIRA20DP-T1-RE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 81.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) +16V, -12V Input Capacitance (Ciss) (Max) @ Vds 10850pF @ 10V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |