Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIRA18BDP-T1-GE3 Datasheet

SIRA18BDP-T1-GE3 Cover
DatasheetSIRA18BDP-T1-GE3
File Size240.48 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIRA18BDP-T1-GE3
Description MOSFET N-CH 30-V PWRPAK SO-8

SIRA18BDP-T1-GE3 - Vishay Siliconix

SIRA18BDP-T1-GE3 Datasheet Page 1
SIRA18BDP-T1-GE3 Datasheet Page 2
SIRA18BDP-T1-GE3 Datasheet Page 3
SIRA18BDP-T1-GE3 Datasheet Page 4
SIRA18BDP-T1-GE3 Datasheet Page 5
SIRA18BDP-T1-GE3 Datasheet Page 6
SIRA18BDP-T1-GE3 Datasheet Page 7
SIRA18BDP-T1-GE3 Datasheet Page 8
SIRA18BDP-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SIRA18BDP-T1-GE3 SIRA18BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 30-V PWRPAK SO-8 132

More on Order

URL Link

SIRA18BDP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.83mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 17W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8