Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIRA10BDP-T1-GE3 Datasheet

SIRA10BDP-T1-GE3 Cover
DatasheetSIRA10BDP-T1-GE3
File Size422.04 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIRA10BDP-T1-GE3
Description MOSFET N-CHAN 30V

SIRA10BDP-T1-GE3 - Vishay Siliconix

SIRA10BDP-T1-GE3 Datasheet Page 1
SIRA10BDP-T1-GE3 Datasheet Page 2
SIRA10BDP-T1-GE3 Datasheet Page 3
SIRA10BDP-T1-GE3 Datasheet Page 4
SIRA10BDP-T1-GE3 Datasheet Page 5
SIRA10BDP-T1-GE3 Datasheet Page 6
SIRA10BDP-T1-GE3 Datasheet Page 7
SIRA10BDP-T1-GE3 Datasheet Page 8
SIRA10BDP-T1-GE3 Datasheet Page 9
SIRA10BDP-T1-GE3 Datasheet Page 10
SIRA10BDP-T1-GE3 Datasheet Page 11
SIRA10BDP-T1-GE3 Datasheet Page 12
SIRA10BDP-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SIRA10BDP-T1-GE3 SIRA10BDP-T1-GE3 Vishay Siliconix MOSFET N-CHAN 30V 236

More on Order

URL Link

SIRA10BDP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.2nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1710pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8