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SIR802DP-T1-GE3 Datasheet

SIR802DP-T1-GE3 Cover
DatasheetSIR802DP-T1-GE3
File Size340.77 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR802DP-T1-GE3
Description MOSFET N-CH 20V 30A PPAK SO-8

SIR802DP-T1-GE3 - Vishay Siliconix

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URL Link

SIR802DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1785pF @ 10V

FET Feature

-

Power Dissipation (Max)

4.6W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8