Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIR172DP-T1-GE3 Datasheet

SIR172DP-T1-GE3 Cover
DatasheetSIR172DP-T1-GE3
File Size319.71 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIR172DP-T1-GE3
Description MOSFET N-CH 30V 20A PPAK SO-8

SIR172DP-T1-GE3 - Vishay Siliconix

SIR172DP-T1-GE3 Datasheet Page 1
SIR172DP-T1-GE3 Datasheet Page 2
SIR172DP-T1-GE3 Datasheet Page 3
SIR172DP-T1-GE3 Datasheet Page 4
SIR172DP-T1-GE3 Datasheet Page 5
SIR172DP-T1-GE3 Datasheet Page 6
SIR172DP-T1-GE3 Datasheet Page 7
SIR172DP-T1-GE3 Datasheet Page 8
SIR172DP-T1-GE3 Datasheet Page 9
SIR172DP-T1-GE3 Datasheet Page 10
SIR172DP-T1-GE3 Datasheet Page 11
SIR172DP-T1-GE3 Datasheet Page 12
SIR172DP-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SIR172DP-T1-GE3 SIR172DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 20A PPAK SO-8 300

More on Order

URL Link

SIR172DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 16.1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

997pF @ 15V

FET Feature

-

Power Dissipation (Max)

29.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8