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| Datasheet | SIJ462DP-T1-GE3 |
| File Size | 215.01 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIJ462DP-T1-GE3 |
| Description | MOSFET N-CH 60V 46.5A PPAK SO-8 |
SIJ462DP-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIJ462DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 46.5A(Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 30V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |