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SIHW47N60E-GE3 Datasheet

SIHW47N60E-GE3 Cover
DatasheetSIHW47N60E-GE3
File Size237.56 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHW47N60E-GE3
Description MOSFET N-CH 600V 47A TO-247AD

SIHW47N60E-GE3 - Vishay Siliconix

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SIHW47N60E-GE3 SIHW47N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 47A TO-247AD 807

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URL Link

SIHW47N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

64mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9620pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-3P-3 Full Pack