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SIHP18N50C-E3 Datasheet

SIHP18N50C-E3 Cover
DatasheetSIHP18N50C-E3
File Size322.61 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHP18N50C-E3
Description MOSFET N-CH 500V 18A TO220

SIHP18N50C-E3 - Vishay Siliconix

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SIHP18N50C-E3 SIHP18N50C-E3 Vishay Siliconix MOSFET N-CH 500V 18A TO220 488

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URL Link

SIHP18N50C-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2942pF @ 25V

FET Feature

-

Power Dissipation (Max)

223W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3