Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHP105N60EF-GE3 |
| File Size | 269.89 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHP105N60EF-GE3 |
| Description | EF SERIES POWER MOSFET WITH FAST |
SIHP105N60EF-GE3 - Vishay Siliconix
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SIHP105N60EF-GE3 | Vishay Siliconix | EF SERIES POWER MOSFET WITH FAST | 353 More on Order |
URL Link
www.oemstron.com/datasheet/SIHP105N60EF-GE3
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Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 102mOhm @ 13A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1804pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |