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SIHH125N60EF-T1GE3 Datasheet

SIHH125N60EF-T1GE3 Cover
DatasheetSIHH125N60EF-T1GE3
File Size180.66 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHH125N60EF-T1GE3
Description MOSFET N-CH EF PWR PWRPAK 8X8

SIHH125N60EF-T1GE3 - Vishay Siliconix

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URL Link

SIHH125N60EF-T1GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

EF

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1533pF @ 100V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN