Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIHH100N60E-T1-GE3 Datasheet

SIHH100N60E-T1-GE3 Cover
DatasheetSIHH100N60E-T1-GE3
File Size189.3 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHH100N60E-T1-GE3
Description MOSFET E SERIES 600V POWERPAK 8X

SIHH100N60E-T1-GE3 - Vishay Siliconix

SIHH100N60E-T1-GE3 Datasheet Page 1
SIHH100N60E-T1-GE3 Datasheet Page 2
SIHH100N60E-T1-GE3 Datasheet Page 3
SIHH100N60E-T1-GE3 Datasheet Page 4
SIHH100N60E-T1-GE3 Datasheet Page 5
SIHH100N60E-T1-GE3 Datasheet Page 6
SIHH100N60E-T1-GE3 Datasheet Page 7
SIHH100N60E-T1-GE3 Datasheet Page 8
SIHH100N60E-T1-GE3 Datasheet Page 9
SIHH100N60E-T1-GE3 Datasheet Page 10

The Products You May Be Interested In

SIHH100N60E-T1-GE3 SIHH100N60E-T1-GE3 Vishay Siliconix MOSFET E SERIES 600V POWERPAK 8X 4404

More on Order

URL Link

SIHH100N60E-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 100V

FET Feature

-

Power Dissipation (Max)

174W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN