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SIHD6N62ET1-GE3 Datasheet

SIHD6N62ET1-GE3 Cover
DatasheetSIHD6N62ET1-GE3
File Size222.51 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIHD6N62ET1-GE3, SIHD6N62E-GE3
Description MOSFET N-CH 620V 6A TO252AA, MOSFET N-CH 620V 6A TO-252

SIHD6N62ET1-GE3 - Vishay Siliconix

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SIHD6N62E-GE3 SIHD6N62E-GE3 Vishay Siliconix MOSFET N-CH 620V 6A TO-252 4718

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URL Link

SIHD6N62ET1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

578pF @ 100V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD6N62E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

578pF @ 100V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63