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| Datasheet | SIHD14N60E-GE3 |
| File Size | 131.26 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHD14N60E-GE3 |
| Description | MOSFET N-CHANNEL 600V 13A DPAK |
SIHD14N60E-GE3 - Vishay Siliconix
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SIHD14N60E-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 600V 13A DPAK | 4164 More on Order |
URL Link
www.oemstron.com/datasheet/SIHD14N60E-GE3
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Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 309mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 100V FET Feature - Power Dissipation (Max) 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |