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| Datasheet | SIHB4N80E-GE3 |
| File Size | 132.36 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHB4N80E-GE3 |
| Description | MOSFET N-CH 800V D2PAK TO-263 |
SIHB4N80E-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIHB4N80E-GE3
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Manufacturer Vishay Siliconix Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |