Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHB22N60EF-GE3 |
| File Size | 193.89 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHB22N60EF-GE3 |
| Description | MOSFET N-CH 600V D2PAK TO-263 |
SIHB22N60EF-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHB22N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V D2PAK TO-263 | 377 More on Order |
URL Link
www.oemstron.com/datasheet/SIHB22N60EF-GE3
|
Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 182mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 100V FET Feature - Power Dissipation (Max) 179W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |