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| Datasheet | SIF912EDZ-T1-E3 |
| File Size | 101.37 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIF912EDZ-T1-E3 |
| Description | MOSFET 2N-CH 30V 7.4A 6-POWERPAK |
SIF912EDZ-T1-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIF912EDZ-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A Rds On (Max) @ Id, Vgs 19mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 2x5 Supplier Device Package PowerPAK® (2x5) |