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| Datasheet | SIE816DF-T1-GE3 |
| File Size | 135.22 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIE816DF-T1-GE3, SIE816DF-T1-E3 |
| Description | MOSFET N-CH 60V 60A POLARPAK, MOSFET N-CH 60V 60A POLARPAK |
SIE816DF-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.4mOhm @ 19.8A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 30V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.4mOhm @ 19.8A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 30V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |